Datasheet > BCR10LM-16LH-1-B00

BCR10LM-16LH-1-B00

更新时间： 2022-10-15 10:04:17

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	118K
描述
Triac Medium Power Use

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BCR10LM-16LH-1-B00 数据手册

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BCR10LM-16LH

Preliminary

Performance Curves

Maximum On-State Characteristics

Rated Surge On-State Current

10²

10¹

10⁰

100

Tj = 150°C

Tj = 25°C

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

On-State Voltage (V)

10⁰

10¹

10²

Conduction Time (Cycles at 60Hz)

Gate Trigger Current vs.

Junction Temperature

Gate Characteristics

V_GM= 10V

10³

10²

10¹

Typical Example

10¹

P_GM= 5W

I_GM= 2A

G(AV) =

I , I

RGT I RGT III

0.5W

GT = 1.5V

FGT I

10⁰

I_{FGT I}, I_{RGT I}, I_{RGT III}

V_GD= 0.1V

10⁻¹

10¹

10²

10³

–40

120

160

Gate Current (mA)

Junction Temperature (°C)

Gate Trigger Voltage vs.

Junction Temperature

Maximum Transient Thermal Impedance

Characteristics (Junction to case)

10²

10³

10⁴

10³

10²

10¹

Typical Example

10⁻¹

10⁰

10¹

10²

–40

120

160

Junction Temperature (°C)

Conduction Time (Cycles at 60Hz)

R07DS0319EJ0100 Rev.1.00

May 18, 2011

Page 3 of 7

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