Datasheet > BC856AW

BC856AW

更新时间： 2024-11-25 06:41:39

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	50K
描述
PNP General Purpose Transistor

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中文翻译

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数据手册

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BC856AW 数据手册

SMD Type

TransistIoCrs

PNP General Purpose Transistor

BC856W,BC857W,BC858W

Features

Low current (max. 100 mA).

Low voltage (max. 65 V).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

BC856W BC857W BC858W

Unit

-80

-65

-50

-45

-30

Collector-emitter voltage

Emitter-base voltage

-5

-100

Collector current

-200

Peak collector current

I^CM

-200

Peak base current

I^BM

200

Total power dissipation

Junction temperature

P^tot

150

T^j

-65 to +150

625

Storage temperature

Tstg

Operating ambient temperature

Thermal resistance from junction to ambient

Ramb

Rth j-a

K/W

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