生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 5 pF | 集电极-发射极最大电压: | 65 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 125 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
VCEsat-Max: | 0.65 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC856AW-TAPE-7 | NXP |
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TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BC856B | MCC |
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PNP Small Signal Transistor 310mW | |
BC856B | RECTRON |
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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) | |
BC856B | TAITRON |
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SMD General Purpose Transistor (PNP) | |
BC856B | NXP |
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PNP general purpose transistors | |
BC856B | NEXPERIA |
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65 V, 100 mA PNP general-purpose transistorsProduction | |
BC856B | DIOTEC |
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Surface mount Si-Epitaxial PlanarTransistors | |
BC856B | FAIRCHILD |
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Switching and Amplifier Applications | |
BC856B | CENTRAL |
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SURFACE MOUNT PNP SILICON TRANSISTOR | |
BC856B | SECOS |
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BC856A |