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BC856B PDF预览

BC856B

更新时间: 2024-11-26 11:11:27
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 237K
描述
65 V, 100 mA PNP general-purpose transistorsProduction

BC856B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.51
Samacsys Description:BC856B, PNP Bipolar Transistor, 0.1 A 65 V HFE:220 100 MHz Small Signal, 3-Pin TO-236AB最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):220JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP参考标准:IEC-60134
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC856B 数据手册

 浏览型号BC856B的Datasheet PDF文件第2页浏览型号BC856B的Datasheet PDF文件第3页浏览型号BC856B的Datasheet PDF文件第4页浏览型号BC856B的Datasheet PDF文件第5页浏览型号BC856B的Datasheet PDF文件第6页浏览型号BC856B的Datasheet PDF文件第7页 
BC856; BC857; BC858  
65 V, 100 mA PNP general-purpose transistors  
Rev. 9 — 1 July 2022  
Product data sheet  
1. General description  
PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD)  
plastic package.  
Table 1. Product overview  
Type number  
Package  
Nexperia  
SOT23  
NPN complement  
JEDEC  
BC856  
TO-236AB  
BC846  
BC856A  
BC856B  
BC857  
BC846A  
BC846B  
BC847  
BC857A  
BC857B  
BC857C  
BC858B  
BC847A  
BC847B  
BC847C  
BC848B  
2. Features and benefits  
Low current (max. 100 mA)  
Low voltage (max. 65 V)  
3. Applications  
General-purpose switching and amplification  
 
 
 

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