Datasheet > BC856BDW1T1/D

BC856BDW1T1/D

更新时间： 2024-09-24 23:34:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	116K
描述
Dual General Purpose Transistors

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中文翻译

获取价格

数据手册

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BC856BDW1T1/D 数据手册

BC856BDW1T1,

BC857BDW1T1,

BC857CDW1T1,

BC858BDW1T1,

BC858CDW1T1

Preferred Devices

http://onsemi.com

Dual General Purpose

Transistors

(3)

(2)

(1)

PNP Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–363/SC–88 which is

designed for low power surface mount applications.

(4)

(5)

(6)

• Device Marking:

BC856BDW1T1 = 3B

BC857BDW1T1 = 3F

BC857CDW1T1 = 3G

BC858BDW1T1 = 3K

BC858CDW1T1 = 3L

MAXIMUM RATINGS

Rating

Symbol BC856 BC857 BC858 Unit

SOT–363/SC–88

CASE 419B

STYLE 1

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

–65

–80

–45

–50

–30

–5.0

–100

–5.0

–100

–5.0

–100

DEVICE MARKING

Collector Current –

Continuous

mAdc

THERMAL CHARACTERISTICS

See Table

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Per Device

380

250

FR–5 Board (Note 1.)

T = 25°C

Derate Above 25°C

3.0

mW/°C

°C/W

ORDERING INFORMATION

Thermal Resistance,

Junction to Ambient

328

Device

Package

SOT–363

Shipping

Junction and Storage

Temperature Range

T , T

–55 to +150

°C

stg

BC856BDW1T1

BC857BDW1T1

BC857CDW1T1

BC858BDW1T1

BC858CDW1T1

3000 Units/Reel

1. FR–5 = 1.0 x 0.75 x 0.062 in

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

January, 2001 – Rev. 1

BC856BDW1T1/D

12 3 4 5 6 7 8

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