BC856BLT3

更新时间： 2024-11-20 22:54:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
8页	112K
描述
General Purpose Transistors(PNP Silicon)

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BC856BLT3 数据手册

BC856ALT1 Series

Preferred Devices

General Purpose

Transistors

PNP Silicon

Features

http://onsemi.com

• Pb−Free Packages are Available

COLLECTOR

BASE

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

EMITTER

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BC856

BC857

CEO

CBO

EBO

−65

−45

−30

BC858, BC859

Collector-Base Voltage

Emitter−Base Voltage

BC856

BC857

−80

−50

−30

SOT−23

CASE 318

STYLE 6

BC858, BC859

−5.0

Collector Current − Continuous

−100

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

MARKING DIAGRAM

THERMAL CHARACTERISTICS

xxM

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

xx = Device Code

M = Date Code

Thermal Resistance,

Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Substrate, (Note 2) T = 25°C

Derate above 25°C

300

2.4

mW/°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Thermal Resistance,

Junction−to−Ambient

417

°C/W

°C

Junction and Storage Temperature

T , T

−55 to

+150

stg

Preferred devices are recommended choices for future use

and best overall value.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 8

BC856ALT1/D

12 3 4 5 6 7 8

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BC856BLT3 替代型号

型号	品牌	替代类型	描述	数据表
BC856BLT3G	ONSEMI	类似代替	General Purpose Transistors PNP Silicon

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