Datasheet > BC856BQB

BC856BQB

更新时间： 2024-11-22 11:12:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	227K
描述
65 V, 100 mA PNP general-purpose transistorsProduction

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BC856BQB 数据手册

BC856xQB series

65 V, 100 mA PNP general-purpose transistor

Rev. 1 — 22 September 2021

Product data sheet

1. General description

PNP general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-

Mounted Device (SMD) plastic package with side-wettable flanks.

Table 1. Product overview

Type number

Package

Nexperia

SOT8015

NPN complement:

JEDEC

BC856AQB

BC856BQB

MO-340BA

BC846AQB

BC846BQB

2. Features and benefits

•

High power dissipation capability

Suitable for Automatic Optical Inspection (AOI) of solder joint

Smaller footprint compared to conventional leaded SMD packages

Low package height of 0.5 mm

3. Applications

•

General-purpose switching and amplification

Space restricted applications

4. Quick reference data

Table 2. Quick reference data

T_amb= 25 °C unless otherwise specified.

Symbol

V_CEO

I_C

Parameter

Conditions

Min

Typ

Max

-65

Unit

collector-emitter voltage

collector current

peak collector current

DC current gain

BC856AQB

open base

-100

-200

I_CM

single pulse; t_p≤ 1 ms

V_CE= -5 V; I_C= -2 mA

h_FE

125

220

250

475

BC856BQB

12 3 4 5 6 7...12

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