Datasheet > BC856BQB-Q

BC856BQB-Q

更新时间： 2024-11-19 11:12:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	243K
描述
65 V, 100 mA PNP general-purpose transistorsProduction

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BC856BQB-Q 数据手册

BC856xQB-Q series

65 V, 100 mA PNP general-purpose transistor

Rev. 1 — 22 September 2021

Product data sheet

1. General description

PNP general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-

Mounted Device (SMD) plastic package with side-wettable flanks.

Table 1. Product overview

Type number

Package

Nexperia

SOT8015

NPN complement:

JEDEC

BC856AQB-Q

BC856BQB-Q

MO-340BA

BC846AQB-Q

BC846BQB-Q

2. Features and benefits

•

High power dissipation capability

Suitable for Automatic Optical Inspection (AOI) of solder joint

Smaller footprint compared to conventional leaded SMD packages

Low package height of 0.5 mm

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General-purpose switching and amplification

Space restricted applications

4. Quick reference data

Table 2. Quick reference data

T_amb= 25 °C unless otherwise specified.

Symbol

V_CEO

I_C

Parameter

Conditions

Min

Typ

Max

-65

Unit

collector-emitter voltage

collector current

peak collector current

DC current gain

BC856AQB-Q

open base

-100

-200

I_CM

single pulse; t_p≤ 1 ms

V_CE= -5 V; I_C= -2 mA

h_FE

125

220

250

475

BC856BQB-Q

12 3 4 5 6 7...12

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