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BC856BS

更新时间: 2024-11-18 06:41:39
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
12页 94K
描述
65 V, 100 mA PNP/PNP general-purpose transistor

BC856BS 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SC-88
包装说明:PLASTIC, SC-88, 6 PIN针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.06Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:PURE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC856BS 数据手册

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BC856BS  
65 V, 100 mA PNP/PNP general-purpose transistor  
Rev. 01 — 11 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)  
plastic package.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
NPN/NPN  
complement  
NPN/PNP  
complement  
JEITA  
BC856BS  
SOT363  
SC-88  
BC846BS  
BC846BPN  
1.2 Features  
I Low collector capacitance  
I Low collector-emitter saturation voltage  
I Closely matched current gain  
I Reduces number of components and board space  
I No mutual interference between the transistors  
I AEC-Q101 qualified  
1.3 Applications  
I General-purpose switching and amplification  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Per transistor  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
65  
V
-
-
100  
450  
mA  
hFE  
DC current gain  
VCE = 5 V;  
IC = 2 mA  
200  
290  

BC856BS 替代型号

型号 品牌 替代类型 描述 数据表
BC856BS NEXPERIA

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