Datasheet > BC856BS-Q

BC856BS-Q

更新时间： 2024-09-25 17:01:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	239K
描述
65 V, 100 mA PNP/PNP general-purpose transistorProduction

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BC856BS-Q 数据手册

BC856BS-Q

65 V, 100 mA PNP/PNP general-purpose transistor

9 November 2023

Product data sheet

1. General description

PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic

package.

NPN/NPN complement: BC846BS

NPN/PNP complement: BC846BPN

2. Features and benefits

•

Low collector capacitance

•

Low collector-emitter saturation voltage

Closely matched current gain

Reduces number of components and board space

No mutual interference between the transistors

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General-purpose switching and amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-65

I_C

collector current

DC current gain

-100

450

h_FE

V_CE= -5 V; I_C= -2 mA

200

290

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter TR1

base TR1

Simplified outline

Graphic symbol

C1 B2

TR2

collector TR2

emitter TR2

base TR2

TR1

B1 C2

TSSOP6 (SOT363)

sym018

collector TR1

12 3 4 5 6 7...10

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