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BC856BP PDF预览

BC856BP

更新时间: 2024-11-22 14:51:27
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
5页 860K
描述
小信号晶体管

BC856BP 数据手册

 浏览型号BC856BP的Datasheet PDF文件第2页浏览型号BC856BP的Datasheet PDF文件第3页浏览型号BC856BP的Datasheet PDF文件第4页浏览型号BC856BP的Datasheet PDF文件第5页 
BC856BP…BC860BP  
PNP Silicon Epitaxial Transistor  
Applications  
• For switching and amplifier applications  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Value  
Unit  
Collector Base Voltage  
BC856BP  
-VCBO  
-VCBO  
-VCBO  
-VCEO  
-VCEO  
-VCEO  
80  
50  
30  
65  
45  
30  
V
V
V
V
V
V
BC857BP, BC860BP  
BC858BP, BC859BP  
BC856BP  
BC857BP, BC860BP  
BC858BP, BC859BP  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current  
-VEBO  
-IC  
5
100  
V
mA  
mA  
mW  
Peak Collector Current  
Power Dissipation  
-ICM  
Ptot  
Tj  
200  
200  
O
Junction Temperature  
Storage Temperature Range  
150  
C
O
Tstg  
- 65 to + 150  
C
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Value  
625  
Unit  
/W  
Thermal Resistance from Junction Ambient 1)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
®
1 / 5  
Dated07/04/2023 Rev: 02  

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