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BC856BLT3G PDF预览

BC856BLT3G

更新时间: 2024-02-25 01:23:32
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管PC
页数 文件大小 规格书
7页 172K
描述
General Purpose Transistors PNP Silicon

BC856BLT3G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:0.51
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224488Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-07-24 09:13:32
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):220JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC856BLT3G 数据手册

 浏览型号BC856BLT3G的Datasheet PDF文件第2页浏览型号BC856BLT3G的Datasheet PDF文件第3页浏览型号BC856BLT3G的Datasheet PDF文件第4页浏览型号BC856BLT3G的Datasheet PDF文件第5页浏览型号BC856BLT3G的Datasheet PDF文件第6页浏览型号BC856BLT3G的Datasheet PDF文件第7页 
BC856ALT1G Series  
General Purpose  
Transistors  
PNP Silicon  
Features  
http://onsemi.com  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
COLLECTOR  
3
1
BASE  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
2
A
EMITTER  
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
BC856  
BC857  
V
CEO  
65  
45  
30  
V
BC858, BC859  
3
Collector-Base Voltage  
BC856  
BC857  
V
CBO  
80  
50  
30  
V
1
BC858, BC859  
2
EmitterBase Voltage  
V
5.0  
V
EBO  
SOT23 (TO236AB)  
CASE 318  
Collector Current Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
100  
mAdc  
STYLE 6  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
Total Device Dissipation FR5 Board,  
P
D
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
xx M G  
Thermal Resistance,  
JunctiontoAmbient  
R
556  
°C/W  
q
JA  
G
1
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) T = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
A
xx = Device Code  
xx = (Refer to page 6)  
Thermal Resistance,  
JunctiontoAmbient  
R
417  
°C/W  
q
JA  
M
= Date Code*  
G
= PbFree Package  
Junction and Storage Temperature  
T , T  
J
55 to +150  
°C  
(Note: Microdot may be in either location)  
stg  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 x 0.75 x 0.062 in.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 11  
BC856ALT1/D  
 

BC856BLT3G 替代型号

型号 品牌 替代类型 描述 数据表
SBC856BLT3G ONSEMI

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