Datasheet > BC856BM

BC856BM

更新时间： 2024-11-22 11:14:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	658K
描述
60 V, 100 mA PNP general-purpose transistorProduction

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BC856BM 数据手册

BC856BM

60 V, 100 mA PNP general-purpose transistor

19 August 2015

Product data sheet

1. General description

PNP general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface-

Mounted Device (SMD) plastic package.

NPN complement: BC846BM.

2. Features and benefits

Leadless ultra small SMD plastic package

Power dissipation comparable to SOT23

AEC-Q101 qualified

•

3. Applications

General-purpose switching and amplification

Mobile applications

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

DC current gain

-100

475

h_FE

V_CE= -5 V; I_C= -2 mA; T_amb= 25 °C

220

5. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

base

emitter

collector

Transparent

top view

DFN1006-3 (SOT883)

sym013

12 3 4 5 6 7...12

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