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BC856BLT1G PDF预览

BC856BLT1G

更新时间: 2024-11-17 22:54:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管PC
页数 文件大小 规格书
8页 112K
描述
General Purpose Transistors(PNP Silicon)

BC856BLT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.5Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:224487
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08
Samacsys Released Date:2015-07-24 09:13:45Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SINGLE最小直流电流增益 (hFE):220
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC856BLT1G 数据手册

 浏览型号BC856BLT1G的Datasheet PDF文件第2页浏览型号BC856BLT1G的Datasheet PDF文件第3页浏览型号BC856BLT1G的Datasheet PDF文件第4页浏览型号BC856BLT1G的Datasheet PDF文件第5页浏览型号BC856BLT1G的Datasheet PDF文件第6页浏览型号BC856BLT1G的Datasheet PDF文件第7页 
BC856ALT1 Series  
Preferred Devices  
General Purpose  
Transistors  
PNP Silicon  
Features  
http://onsemi.com  
Pb−Free Packages are Available  
COLLECTOR  
3
1
BASE  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
2
A
EMITTER  
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
BC856  
BC857  
V
CEO  
V
CBO  
V
EBO  
−65  
−45  
−30  
V
BC858, BC859  
3
Collector-Base Voltage  
Emitter−Base Voltage  
BC856  
BC857  
−80  
−50  
−30  
V
SOT−23  
CASE 318  
STYLE 6  
1
BC858, BC859  
2
−5.0  
V
Collector Current − Continuous  
I
C
−100  
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
MARKING DIAGRAM  
3
THERMAL CHARACTERISTICS  
xxM  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board,  
P
D
1
2
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
xx = Device Code  
M = Date Code  
Thermal Resistance,  
Junction−to−Ambient  
R
556  
°C/W  
q
JA  
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) T = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
A
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Thermal Resistance,  
Junction−to−Ambient  
R
417  
°C/W  
°C  
q
JA  
Junction and Storage Temperature  
T , T  
J
55 to  
+150  
stg  
Preferred devices are recommended choices for future use  
and best overall value.  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 8  
BC856ALT1/D  
 

BC856BLT1G 替代型号

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