是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SC-88 | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 0.91 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 65 V |
配置: | SEPARATE, 2 ELEMENTS | 最小直流电流增益 (hFE): | 220 |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.38 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BC856BDW1T3 | ONSEMI |
完全替代 |
双 PNP 双极晶体管 | |
SBC856BDW1T1G | ONSEMI |
完全替代 |
Dual General Purpose Transistors | |
BC856BDW1T1G | ONSEMI |
完全替代 |
Dual General Purpose Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC856BDW-AH | SWST |
获取价格 |
小信号晶体管 | |
BC856BE6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon | |
BC856BE6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon | |
BC856BF | NXP |
获取价格 |
PNP general purpose transistors | |
BC856B-GS18 | VISHAY |
获取价格 |
Transistor, | |
BC856BHE3 | MCC |
获取价格 |
Tape: 3K/Reel , 120K/Ctn; | |
BC856B-HF | COMCHIP |
获取价格 |
General Purpose Transistor | |
BC856BL | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 100MA I(C) | SOT-23 | |
BC856BL | BL Galaxy Electrical |
获取价格 |
65V,0.1A,General Purpose PNP Bipolar Transistor | |
BC856BL3 | MCC |
获取价格 |
Small Signal Bipolar Transistor, |