是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最大集电极电流 (IC): | 0.1 A |
配置: | Single | 最小直流电流增益 (hFE): | 200 |
JESD-609代码: | e3 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.31 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC856BHE3 | MCC |
获取价格 |
Tape: 3K/Reel , 120K/Ctn; | |
BC856B-HF | COMCHIP |
获取价格 |
General Purpose Transistor | |
BC856BL | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 100MA I(C) | SOT-23 | |
BC856BL | BL Galaxy Electrical |
获取价格 |
65V,0.1A,General Purpose PNP Bipolar Transistor | |
BC856BL3 | MCC |
获取价格 |
Small Signal Bipolar Transistor, | |
BC856BL99Z | TI |
获取价格 |
PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | |
BC856BLT1 | MOTOROLA |
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CASE 318-08, STYLE 6 SOT-23 (TO-236AB) | |
BC856BLT1 | LRC |
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General Purpose Transistors(PNP Silicon) | |
BC856BLT1 | ONSEMI |
获取价格 |
General Purpose Transistors | |
BC856BLT1G | ONSEMI |
获取价格 |
General Purpose Transistors(PNP Silicon) |