Datasheet > BC856BDW-AH

BC856BDW-AH

更新时间： 2024-11-26 14:52:55

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	1077K
描述
小信号晶体管

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数据手册

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BC856BDW-AH 数据手册

BC856DW…BC858DW-AH

Dual PNP Silicon Epitaxial Planar Transistor

For general purpose and switching applications

Features

• AEC-Q101 Qualified

• Halogen and Antimony Free(HAF),

RoHS compliant

TR2

TR1

TR1: 1. Emitter 2. Base 6. Collector

TR2: 4. Emitter 5. Base 3. Collector

SOT-363 Plastic Package

Absolute Maximum Ratings (T_a= 25

)

Parameter

Symbol

-V_CBO

Value

Unit

Collector Base Voltage

BC856DW

BC857DW

BC858DW

Collector Emitter Voltage

BC856DW

BC857DW

BC858DW

-V_CEO

Emitter Base Voltage

Collector Current

-V_EBO

-I_C

100

Peak Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature Range

-I_CM

P_tot

T_j

200

150

T_Stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

Thermal Resistance from Junction Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 5

Dated: 15/12/2021 Rev: 01

12 3 4 5

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