BC856BDW1T1

更新时间： 2024-09-24 22:39:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	110K
描述
Dual General Purpose Transistors

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中文翻译

获取价格

数据手册
替代型号

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BC856BDW1T1 数据手册

BC856BDW1T1,

BC857BDW1T1 Series,

BC858BDW1T1 Series

Preferred Devices

Dual General Purpose

Transistors

http://onsemi.com

PNP Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

(3)

(2)

(1)

• Device Marking:

BC856BDW1T1 = 3B

BC857BDW1T1 = 3F

BC857CDW1T1 = 3G

BC858BDW1T1 = 3K

BC858CDW1T1 = 3L

(4)

(5)

(6)

DEVICE MARKING

MAXIMUM RATINGS

Rating

Symbol BC856 BC857 BC858 Unit

3xm

See Table

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

−65

−80

−45

−50

−30

CEO

CBO

EBO

SOT−363/SC−88

CASE 419B

Style 1

−5.0

−100

−5.0

−100

−5.0

−100

Collector Current −

Continuous

mAdc

3x = Specific Device Code

THERMAL CHARACTERISTICS

= B, F, G, K, L

Characteristic

Symbol

Max

Unit

M = Date Code

Total Device Dissipation

Per Device

FR−5 Board (Note 1)

380

250

ORDERING INFORMATION

T = 25°C

Derate Above 25°C

†

Device

Package

SOT−363

Shipping

3.0

mW/°C

°C/W

BC856BDW1T1

BC857BDW1T1

BC857CDW1T1

BC858BDW1T1

BC858CDW1T1

3000 Units/Reel

Thermal Resistance,

Junction to Ambient

328

Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

1. FR−5 = 1.0 x 0.75 x 0.062 in

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

January, 2004 − Rev. 3

BC856BDW1T1/D

12 3 4 5 6

中文翻译

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BC856BDW1T1 替代型号

型号	品牌	替代类型	描述	数据表
BC856BDW1T1G	ONSEMI	完全替代	Dual General Purpose Transistors

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