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BC856B PDF预览

BC856B

更新时间: 2024-01-29 02:34:14
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 46K
描述
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

BC856B 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-70包装说明:PLASTIC, SC-70, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.04Is Samacsys:N
最大集电极电流 (IC):0.1 A基于收集器的最大容量:5 pF
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):125JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.65 VBase Number Matches:1

BC856B 数据手册

 浏览型号BC856B的Datasheet PDF文件第2页浏览型号BC856B的Datasheet PDF文件第3页 
BC856A - BC858C  
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR  
Features  
·
·
Ideally Suited for Automatic Insertion  
Complementary NPN Types Available  
(BC846-BC848)  
SOT-23  
A
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.85  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.80  
8°  
C
·
For Switching and AF Amplifier Applications  
B
B
C
Mechanical Data  
·
·
C
TOP VIEW  
B
E
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Pin Connections: See Diagram  
Marking Codes (See Table Below & Diagram  
on Page 3)  
Ordering & Date Code Information: See Page 3  
Approx. Weight: 0.008 grams  
D
D
G
E
E
H
G
H
·
·
K
M
J
J
L
K
·
·
L
M
·
·
a
All Dimensions in mm  
Marking Code (Note 2)  
Type  
Marking  
3A, K3A  
Type  
Marking  
3G, K3G  
BC856A  
BC856B  
BC857A  
BC857B  
BC857C  
BC858A  
3B, K3B  
3J, K3J, K3A, K3V  
3E, K3V, K3A  
3F, K3W, K3B  
BC858B 3K, K3K, K3B, K3W  
BC858C 3L, K3L, K3G  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
-80  
-50  
-30  
Collector-Base Voltage  
BC856  
BC857  
BC858  
VCBO  
V
-65  
-45  
-30  
Collector-Emitter Voltage  
BC856  
BC857  
BC858  
VCEO  
V
VEBO  
IC  
-5.0  
-100  
V
mA  
mA  
mA  
mW  
°C/W  
°C  
Emitter-Base Voltage  
Collector Current  
ICM  
Peak Collector Current  
-200  
IEM  
Peak Emitter Current  
-200  
Pd  
Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
300  
RqJA  
Tj, TSTG  
417  
-65 to +150  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Current gain subgroup “C” is not available for BC856.  
DS11207 Rev. 12 - 2  
1 of 3  
BC856A-BC858C  

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