Datasheet > BC856B

BC856B

更新时间： 2024-11-25 06:41:39

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	42K
描述
PNP General Purpose Transistor

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中文翻译

获取价格

数据手册

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BC856B 数据手册

SMD Type

TransistIoCrs

PNP General Purpose Transistor

BC856,BC857,BC858

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low current (max. 100 mA).

Low voltage (max. 65 V).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

BC856

-80

BC857

-50

BC858

-30

Unit

Collector-emitter voltage

Emitter-base voltage

-65

-45

-30

-5

-100

Collector current

-200

Peak collector current

I^CM

-200

Peak base current

I^BM

250

Total power dissipation *

Junction temperature

P^tot

150

T^j

-65 to +150

500

Storage temperature

Tstg

Operating ambient temperature

Thermal resistance from junction to ambient *

Ramb

Rth j-a

K/W

* Transistor mounted on an FR4 printed-circuit board, standard footprint.

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