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BC856B PDF预览

BC856B

更新时间: 2024-02-26 23:03:35
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 108K
描述
PNP Small Signal Transistor 310mW

BC856B 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-70包装说明:PLASTIC, SC-70, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.04Is Samacsys:N
最大集电极电流 (IC):0.1 A基于收集器的最大容量:5 pF
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):125JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.65 VBase Number Matches:1

BC856B 数据手册

 浏览型号BC856B的Datasheet PDF文件第2页 
BC856A  
THRU  
BC858C  
M C C  
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21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
PNP Small  
Signal Transistor  
310mW  
l
l
l
Ideally Suited for Automatic Insertion  
150oC Junction Temperature  
For Switching and AF Amplifier Applications  
Mechanical Data  
l Case: SOT-23, Molded Plastic  
SOT-23  
l Terminals: Solderable per MIL-STD-202, Method 208  
l Polarity: See Diagram  
A
D
l Weight: 0.008 grams ( approx.)  
B
C
Marking Code (Note 2)  
Type  
Marking  
3A  
Type  
Marking  
3G  
F
E
BC856A  
BC856B  
BC857A  
BC857B  
BC857C  
BC858A  
BC858B  
BC858C  
3B  
3J  
H
G
J
3E  
3F  
3K  
3L  
DIMENSIONS  
MM  
Maximum Ratings @ 25oC Unless Otherwise Specified  
INCHES  
MIN  
Charateristic  
Symbol Value Unit  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
-80  
-50  
-30  
-65  
-45  
-30  
-5.0  
Collector-Base Voltage  
BC856  
BC857  
BC858  
BC856  
BC857  
BC858  
VCBO  
V
V
F
Collector-Emitter Voltage  
G
H
J
VCEO  
.085  
.37  
K
VEBO  
IC  
Emitter-Base Voltage  
Collector Current  
V
Suggested Solder  
Pad Layout  
-100  
-200  
-200  
310  
mA  
mA  
mA  
mW  
Peak Collector Current  
Peak Emitter Current  
Power Dissipation@Ts=50oC(Note1)  
ICM  
IEM  
Pd  
.031  
.800  
.035  
.900  
Operating & Storage Temperature  
Tj, TSTG -55~150 oC  
.079  
2.000  
inches  
mm  
Note: 1. Package mounted on ceramic substrate 0.7mm X 2.5cm2 area.  
2. Current gain subgroup “ C” is not available for BC856  
.037  
.950  
.037  
.950  
www.mccsemi.com  

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