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BC856AWT1/D PDF预览

BC856AWT1/D

更新时间: 2024-01-02 06:55:34
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 187K
描述
General Purpose Transistors

BC856AWT1/D 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.65Is Samacsys:N
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):125最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC856AWT1/D 数据手册

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Preferred Devices  
http://onsemi.com  
PNP Silicon  
COLLECTOR  
3
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT–323/SC–70 which is  
designed for low power surface mount applications.  
Device Marking:  
1
BASE  
BC856AWT1 = 3A  
BC856BWT1 = 3B  
BC857AWT1 = 3E  
2
EMITTER  
BC857BWT1 = 3F  
BC858AWT1 = 3J  
BC858BWT1 = 3K  
3
BC858CWT1 = 3L  
1
2
MAXIMUM RATINGS  
SOT–323/SC–70  
CASE 419  
Rating  
Symbol BC856 BC857 BC858 Unit  
STYLE 3  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
V
V
–65  
–80  
–45  
–50  
–30  
–30  
V
V
CEO  
CBO  
EBO  
–5.0  
–100  
–5.0  
–100  
–5.0  
–100  
V
DEVICE MARKING  
Collector Current —  
Continuous  
I
C
mAdc  
THERMAL CHARACTERISTICS  
See Table  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
FR5 Board  
P
D
150  
mW  
(1)  
T = 25°C  
A
Thermal Resistance,  
Junction to Ambient  
R
833  
°C/W  
°C  
JA  
ORDERING INFORMATION  
Device  
Package  
SOT–323  
SOT–323  
SOT–323  
SOT–323  
SOT–323  
SOT–323  
SOT–323  
Shipping  
Junction and Storage  
Temperature Range  
T , T  
J
55 to +150  
stg  
BC856AWT1  
BC856BWT1  
BC857AWT1  
BC857BWT1  
BC858AWT1  
BC858BWT1  
BC858CWT1  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
1. FR–5 = 1.0 x 0.75 x 0.062 in  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
March, 2000 – Rev. 1  
BC856AWT1/D  

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