是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 0.65 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 65 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 125 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BC856W | NXP |
类似代替 |
PNP general purpose transistors | |
BC856AW-7 | DIODES |
类似代替 |
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC856AWE6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon | |
BC856AWE6433 | INFINEON |
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Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon | |
BC856AW-G | COMCHIP |
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Small Signal Transistor | |
BC856AWHE3 | MCC |
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Tape&Reel; | |
BC856AWQ | YANGJIE |
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SOT-323 | |
BC856AW-Q | NEXPERIA |
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65 V, 100 mA PNP general-purpose transistorsProduction | |
BC856AWR | CENTRAL |
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65V,100mA,275mW Surface mount Transistor-Small Signal (<=1A) PNP General Purpose Amplifier | |
BC856AWT/R | NXP |
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TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP Gene | |
BC856AWT1 | MOTOROLA |
获取价格 |
CASE 419-02, STYLE 3 SOT-323/SC-70 | |
BC856AWT1 | ONSEMI |
获取价格 |
General Purpose Transistors(PNP Silicon) |