是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 65 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 125 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 235 | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC856AW-7 | DIODES |
获取价格 |
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR |
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BC856AW-7-F | DIODES |
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PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR |
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BC856AWE6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon |
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BC856AWE6433 | INFINEON |
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Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon |
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BC856AW-G | COMCHIP |
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Small Signal Transistor |
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BC856AWHE3 | MCC |
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Tape&Reel; |
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BC856AWQ | YANGJIE |
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SOT-323 |
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BC856AW-Q | NEXPERIA |
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65 V, 100 mA PNP general-purpose transistorsProduction |
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BC856AWR | CENTRAL |
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65V,100mA,275mW Surface mount Transistor-Small Signal (<=1A) PNP General Purpose Amplifier |
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BC856AWT/R | NXP |
获取价格 |
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP Gene |
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