Datasheet > BC847PNQ62702C2374

BC847PNQ62702C2374

更新时间： 2024-09-24 23:34:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	232K
描述
TRANSISTOR SOT363

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BC847PNQ62702C2374 数据手册

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BC 847PN

NPN/PNP Silicon AF Transistor Array

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Two (galvanic) internal isolated NPN/PNP

Transistors in one package

Tape loading orientation

PIN Configuration

NPN-Transistor 1 = E 2 = B 6 = C

Type

Marking Ordering Code

1Ps Q62702-C2374

Package

SOT-363 PNP-Transistor 4 = E 5 = B 3 = C

BC 847PN

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

DC collector current

Peak collector current

CEO

CBO

CES

EBO

100

200

Total power dissipation, T = 115 °C

250

°C

tot

Junction temperature

Storage temperature

150

-65...+150

stg

Thermal Resistance

Junction ambient ¹⁾

≤275

≤140

K/W

thJA

Junction - soldering point

thJS

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Cu

Semiconductor Group

May-12-1998

12 3 4 5 6

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