Datasheet > BC847BTT1/D

BC847BTT1/D

更新时间： 2024-11-14 23:34:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	178K
描述
General Purpose Transistors

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数据手册

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BC847BTT1/D 数据手册

NPN Silicon

http://onsemi.com

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–416/SC–75 package which

is designed for low power surface mount applications.

COLLECTOR

• Device Marking:

BC847BTT1 = 1F

BC847CTT1 = 1G

BASE

EMITTER

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Max

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

6.0

100

Collector Current – Continuous

mAdc

CASE 463

SOT–416/SC–75

STYLE 1

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation,

(1)

FR–4 Board

= 25°C

200

DEVICE MARKING

Derated above 25°C

1.6

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

600

θJA

(1)

See Table

Total Device Dissipation,

(2)

FR–4 Board

= 25°C

300

Derated above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

400

θJA

(2)

ORDERING INFORMATION

Junction and Storage

Temperature Range

T , T

J stg

–55 to

+150

°C

Device

Package

SOT–416

Shipping

(1) FR–4 @ Minimum Pad

(2) FR–4 @ 1.0 × 1.0 Inch Pad

BC847BTT1

BC847CTT1

3000 / Tape & Reel

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

May, 2000 – Rev. 1

BC847BTT1/D

12 3 4 5 6 7 8

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