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BC847BV_11 PDF预览

BC847BV_11

更新时间: 2024-11-15 08:49:47
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 264K
描述
NPN Plastic-Encapsulate Transistors

BC847BV_11 数据手册

 浏览型号BC847BV_11的Datasheet PDF文件第2页浏览型号BC847BV_11的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BC847BV  
Micro Commercial Components  
Features  
NPN  
·
Epitaxial Die Construction  
Complementary PNP Type Available (BC857BV)  
Ultra-small Surface Mount Package  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Plastic-Encapsulate  
Transistors  
·
·
·
Marking:K4V  
SOT-563  
O
Maximum Ratings @ 25 C Unless Otherwise Specified  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Dissipation  
Rating  
45  
50  
6
0.1  
Unit  
V
V
V
A
W
R/W  
R
PC  
0.15  
833  
Thermal Resistance Junction to Ambient  
R
E
JA  
TJ  
Operating Junction Temperature  
-55 to +150  
-55 to +150  
TSTG  
Storage Temperature  
R
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
V(BR)CEO  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=10mAdc, IB=0)  
Min  
Typ  
Max  
Units  
45  
---  
---  
Vdc  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
(IC=10uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
(IE=1uAdc, IC=0)  
Collector Cutoff Current  
(VCB=30Vdc, IE=0Vdc)  
Emitter Cutoff Current  
(VEB=5Vdc, IC=0Vdc)  
DC Current Gain  
(IC=2mAdc, VCE=5Vdc)  
Collector-Emitter Saturation Voltage  
(IC=10mAdc, IB=0.5mAdc)  
(IC=100mAdc, IB=5mAdc)  
Base-Emitter Saturation Voltage  
(IC=10mAdc, IB=0.5mAdc)  
(IC=100mAdc, IB=5mAdc)  
Base-Emitter Voltage  
50  
6
---  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
nAdc  
nAdc  
---  
DIMENSIONS  
INCHES  
MIN  
.006  
.043  
.061  
MM  
---  
15  
DIM  
A
B
C
D
G
H
K
L
M
MAX  
.011  
.049  
.067  
MIN  
0.15  
1.10  
1.55  
MAX  
0.30  
1.25  
1.70  
NOTE  
IEBO  
---  
100  
450  
.020  
0.50  
hFE  
200  
.035  
.059  
.022  
.004  
.004  
.043  
.067  
.023  
.011  
.007  
0.90  
1.50  
0.56  
0.10  
0.10  
1.10  
1.70  
0.60  
0.30  
0.18  
VCE(sat)  
---  
---  
---  
---  
100  
300  
mVdc  
mVdc  
mVdc  
VBE(sat)  
---  
---  
700  
900  
---  
---  
VBE  
(IC=2mAdc, VCE=5Vdc)  
(IC=10mAdc, VCE=5Vdc)  
580  
660  
700  
770  
Transition Frequency  
(VCE=5Vdc, IC=10mAdc, f=100MHz)  
Output Capacitance  
(VCB=10Vdc, f=1.0MHz, IE=0)  
Noise Figure  
(VCE=5V,BW=200Hz, f=1KHz, RS=2k=)  
fT  
100  
---  
---  
---  
---  
---  
4.5  
10  
MHz  
pF  
Cob  
NF  
---  
dB  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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