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BC847BVC_09

更新时间： 2024-11-15 12:20:07
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
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4页 110K
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NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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BC847BVC_09 数据手册

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BC847BVC  
NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
Epitaxial Die Construction  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 3)  
"Green" Device (Note 4)  
Qualified to AEC-Q101 Standards for High Reliability  
•
•
Case: SOT-563  
Case Material: Molded Plastic, "Green" Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Finish - Matte Tin annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
•
•
•
•
•
•
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 0.002 grams (approximate)  
C1  
B2  
E2  
E1  
B1  
C2  
Bottom View  
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
45  
V
6.0  
V
Collector Current  
100  
mA  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 2)  
Symbol  
Value  
150  
Unit  
mW  
PD  
Thermal Resistance, Junction to Ambient (Note 2)  
Operating and Storage Temperature Range  
833  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
hFE  
Min  
50  
45  
6
200  
Typ  
—
—
—
290  
Max  
—
—
—
450  
Unit  
V
V
V
—
Test Condition  
IC = 10μA, IB = 0  
IC = 10mA, IB = 0  
IE = 1μA, IC = 0  
VCE = 5.0V, IC = 2.0mA  
IC = 10mA, IB = 0.5mA  
IC = 100mA, IB = 5.0mA  
IC = 10mA, IB = 0.5mA  
IC = 100mA, IB = 5.0mA  
VCE = 5.0V, IC = 2.0mA  
VCE = 5.0V, IC = 10mA  
VCB = 30V  
(Note 5)  
(Note 5)  
(Note 5)  
(Note 5)  
100  
300  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
(Note 5)  
(Note 5)  
(Note 5)  
(Note 5)  
—
—
—
mV  
mV  
mV  
VCE(SAT)  
VBE(SAT)  
VBE  
700  
900  
—
580  
—
660  
—
700  
770  
ICBO  
ICBO  
15  
5.0  
nA  
µA  
Collector-Emitter Cutoff Current  
—
—
VCB = 30V, TA = 150°C  
VCE = 5.0V, IC = 10mA,  
f = 100MHz  
VCB = 10V, f = 1.0MHz  
VCE = 5V, RS = 2.0kΩ,  
f = 1.0kHz, BW = 200Hz  
Gain Bandwidth Product  
Output Capacitance  
Noise Figure  
100  
—
—
—
—
—
4.5  
10  
MHz  
pF  
fT  
COBO  
NF  
—
dB  
Notes:  
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).  
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. No purposefully added lead.  
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
April 2009  
© Diodes Incorporated  
BC847BVC  
Document number: DS30638 Rev. 5 - 2  
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