Datasheet > BC847BVN

BC847BVN

更新时间： 2024-11-16 14:54:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	1592K
描述
SOT-563

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中文翻译

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数据手册

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BC847BVN 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-563 Plastic-Encapsulate Transistors

DUAL TRANSISTOR (NPN+PNP)

BC847BVN

SOT-563

FEATURES

^zEpitaxial Die Construction

^zTwo isolated NPN/PNP(BC847W+BC857W) Transistors in one package

MAKING: KAW

MAXIMUM RATINGS TR1 (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current –Continuous

Collector Power Dissipation

0.1

150

P_C

Operation Junction and

Storage Temperature Range

℃

T_J,T_stg

-55~+150

CHARACTERISTICS of TR1 (NPN Transistor) (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=10μA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBOI_E=1μA,I_C=0

I_CBO

I_EBO

V_CB=30V,I_E=0

Emitter cut-off current

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=5V,I_C=2mA

200

450

0.25

0.6

V_CE(sat)

V_BE(sat)

V_BE(on)

C_ob

I_C=10mA,I_B=0.5mA

I_C=100mA,I_B=5mA

I_C=10mA,I_B=0.5mA

I_C=100mA,I_B=5mA

V_CE=5V,I_C=2mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.7

0.9

0.58

100

0.7

0.72

6.0

V_CE=5V,I_C=10mA

V_CB=10V,I_E=0,f=1MHz

V_CE=5V,I_C=10mA,f=100MHz

Collector output capacitance

Transition frequency

MHz

f_T

V_CE=5V,I_c=0.2mA,

Noise figure

f=1kHz,Rg=2KΩ,∆f=200Hz

www.jscj-elec.com

Rev. - 2.0

12 3 4 5 6

中文翻译

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