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BC847BV PDF预览

BC847BV

更新时间: 2024-11-15 12:20:35
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
页数 文件大小 规格书
2页 599K
描述
DUAL TRANSISTOR (NPN)

BC847BV 数据手册

 浏览型号BC847BV的Datasheet PDF文件第2页 
BC847BV  
DUAL TRANSISTOR (NPN)  
SOT-563  
FEATURES  
z
Epitaxial Die Construction  
Complementary PNP Type Available  
(BC857BV)  
z
z
Ultra-Small Surface Mount Package  
Marking: K4V  
MAXIMUM RATINGS(TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
Units  
V
50  
45  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
6
V
Collector Current -Continuous  
Collector Power Dissipation  
Thermal Resistance. Junction to Ambient Air  
Junction Temperature  
0.1  
A
PC  
0.15  
833  
W
RθJA  
TJ  
/W  
150  
Storage Temperature  
-55 to +150  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
50  
45  
6
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=10μA,IE=0  
V(BR)CEO IC=10mA,IB=0  
V(BR)EBO IE=1μA,IC=0  
V
V
V
ICBO  
IEBO  
VCB=30V,IE=0  
VEB=5V,IC=0  
15  
nA  
nA  
Emitter cut-off current  
100  
450  
DC current gain  
hFE(1)  
VCE=5V,IC=2mA  
200  
IC=10mA,IB=0.5mA  
IC=100mA,IB=5mA  
IC=10mA,IB=0.5mA  
IC=100mA,IB=5mA  
100  
300  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE(sat)  
VBE  
mV  
mV  
mV  
700  
900  
660  
V
CE=5V,IC=2mA  
CE=5V,IC=10mA  
580  
100  
700  
770  
V
Transition frequency  
Output capacitance  
fT  
VCE=5V,IC=10mA,f=100MHz  
VCB=10V,IE=0,f=1MHz  
MHz  
pF  
Cob  
4.5  
10  
VCE=5V,Rs=2k,  
Noise Figure  
NF  
dB  
f=1kHz,BW=200Hz  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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