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BC847BW PDF预览

BC847BW

更新时间: 2024-01-05 11:34:39
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 103K
描述
Low current (max. 100 mA). Low voltage (max. 65 V).Collector-base voltage VCBO 80 50 30 V

BC847BW 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
JESD-609代码:e3端子面层:Matte Tin (Sn)
Base Number Matches:1

BC847BW 数据手册

 浏览型号BC847BW的Datasheet PDF文件第2页 
TransistIoCrs  
Product specification  
BC846W,BC847W,BC848W  
Features  
Low current (max. 100 mA).  
Low voltage (max. 65 V).  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
BC846W BC847W BC848W  
Unit  
V
80  
65  
6
50  
45  
30  
30  
5
Collector-emitter voltage  
Emitter-base voltage  
V
6
V
100  
Collector current  
mA  
mA  
mA  
mW  
200  
Peak collector current  
ICM  
200  
Peak base current  
IBM  
200  
Total power dissipation  
Junction temperature  
Ptot  
150  
Tj  
-65 to +150  
-65 to +150  
625  
Storage temperature  
Tstg  
Operating ambient temperature  
Thermal resistance from junction to ambient  
Ramb  
Rth j-a  
K/W  
4008-318-123  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  

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