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BC847BVN PDF预览

BC847BVN

更新时间: 2024-11-16 11:15:39
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
9页 196K
描述
45 V, 100 mA NPN/PNP general purpose transistorProduction

BC847BVN 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.5
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN AND PNP表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC847BVN 数据手册

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BC847BVN  
45 V, 100 mA NPN/PNP general purpose transistor  
27 December 2022  
Product data sheet  
1. General description  
NPN/PNP transistor in a SOT666 ultra small Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
300 mW total power dissipation  
Very small 1.6 mm x 1.2 mm ultra thin package  
Replaces two SC-75/SC-89 packaged transistors on same PCB area  
Reduced required PCB area  
Reduced pick and place costs  
3. Applications  
General purpose switching and amplification  
Switch mode power supply complementary MOSFET driver  
Complementary driver for audio amplifiers  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor; for the PNP transistor with negative polarity  
VCEO  
collector-emitter  
voltage  
open base  
-
-
45  
V
IC  
collector current  
-
-
-
-
100  
200  
450  
mA  
mA  
ICM  
hFE  
peak collector current single pulse; tp ≤ 1 ms  
DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 °C  
-
200  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
E1  
Description  
emitter TR1  
base TR1  
Simplified outline  
Graphic symbol  
C1  
B2 E2  
6
5
4
2
B1  
TR2  
3
C2  
collector TR2  
emitter TR2  
base TR2  
TR1  
E1  
4
E2  
5
B2  
1
2
3
B1 C2  
sym019  
SOT666  
6
C1  
collector TR1  
 
 
 
 
 

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