Datasheet > BAW101_07

BAW101_07

更新时间： 2024-11-13 06:41:31

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关
页数	文件大小	规格书
5页	62K
描述
Silicon Switching Diode

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中文翻译

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数据手册

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BAW101_07 数据手册

BAW101...

Silicon Switching Diode

• Electrically insulated high-voltage

medium-speed diodes

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BAW101

Type

BAW101

Package

Configuration

Marking

SOT143

parallel

JPs

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

300

Unit

Diode reverse voltage

Peak reverse voltage

Forward current

300

250

500

Peak forward current

Surge forward current, t = 1 µs

Non-repetitive peak surge forward current

Total power dissipation

500

4.5

FSM

350

°C

tot

T ≤ 35°C

150

Junction temperature

Storage temperature

stg

-65 ... 150

¹Pb-containing package may be available upon special request

2007-04-20

12 3 4 5

中文翻译

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与BAW101_07相关器件

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BAW101_11	CENTRAL	获取价格	SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES
BAW101_15	NXP	获取价格	High voltage double diode
BAW101-215	NXP	获取价格	High voltage double diode
BAW101-7	DIODES	获取价格	Rectifier Diode, 2 Element, 0.25A, 300V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-4
BAW101E6327	ROCHESTER	获取价格	0.25 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-143, 4 PIN
BAW101E6327	INFINEON	获取价格	Rectifier Diode, 2 Element, 0.25A, 300V V(RRM), Silicon, SOT-143, 4 PIN
BAW101E6433	INFINEON	获取价格	Rectifier Diode, 2 Element, 0.25A, 40V V(RRM), Silicon,
BAW101Q	DIODES	获取价格	DUAL SURFACE MOUNT SWITCHING DIODE
BAW101-Q	NEXPERIA	获取价格	High voltage double diodeProduction
BAW101S	DIODES	获取价格	HIGH VOLTAGE DUAL SWITCHING DIODE