Datasheet > BAW101-Q

BAW101-Q

更新时间： 2024-10-05 17:15:27

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	200K
描述
High voltage double diodeProduction

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数据手册

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BAW101-Q 数据手册

BAW101-Q

High voltage double diode

13 March 2024

Product data sheet

1. General description

The BAW101-Q is a high-speed switching diode array with two separate dice, fabricated in

planar technology and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic

package.

2. Features and benefits

•

Small plastic SMD package

•

High switching speed: max. 50 ns

High continuous reverse voltage: 300 V

Electrically insulated diodes

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High voltage switching

Communication

4. Quick reference data

Table 1. Quick reference data

Symbol

Per diode

V_R

Parameter

Conditions

Min

Typ

Max

Unit

reverse voltage

reverse current

300

150

I_R

V_R= 250 V; T_j= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

Simplified outline

Graphic symbol

cathode (diode 1)

cathode (diode 2)

anode (diode 2)

anode (diode 1)

aaa-038542

SOT143B

12 3 4 5 6 7...9

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