Datasheet > BAW101V

BAW101V

更新时间： 2024-10-04 08:49:03

品牌	Logo	应用领域
美台 - DIODES		二极管开关高压
页数	文件大小	规格书
4页	93K
描述
HIGH VOLTAGE DUAL SWITCHING DIODE

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中文翻译

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BAW101V 数据手册

BAW101V

HIGH VOLTAGE DUAL SWITCHING DIODE

Features

Mechanical Data

•

Fast Switching Speed: Maximum of 50ns

High Reverse Breakdown Voltage: 325V for Single Diode or

650V for Series Connection

•

Case: SOT-563

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Two Electrically Isolated Elements in a Single Compact Package

Low Leakage Current: Maximum of 50nA when V_R= 5V or

Maximum of 150nA when V_R= 250V at Room Temperature

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.006 grams (approximate)

•

Thermally Efficient Copper Alloy leadframe for High Power

Dissipation

Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)

"Green" Device (Note 4)

•

Top View

Bottom View

Device Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Symbol

Value

325

650

Unit

Single Diode

Series Connection

Repetitive Peak Reverse Voltage

V_RRM

Single Diode

Series Connection

V_RWM

V_R

Working Peak Reverse Voltage

DC Blocking Voltage

325

650

RMS Reverse Voltage

230

V_R(RMS)

Single Diode Loaded

Double Diode Loaded

250

140

Forward Current (Note 2)

I_F

8.0

3.0

Non-Repetitive Peak Forward Surge Current @ t = 1.0μs

Repetitive Peak Forward Current @ t = 8.3ms (Note 2)

I_FSM

I_FRM

Thermal Characteristics

Characteristic

Power Dissipation (Note 2)

Symbol

P_D

Value

500

Unit

Thermal Resistance Junction to Ambient Air (Note 2)

Operating and Storage Temperature Range

250

°C/W

°C

R_θ

-55 to +150

T_J, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 1)

Symbol

V_(BR)R

V_F

Min

300

⎯

Max

⎯

1.1

Unit

Test Condition

I_R= 100μA

I_F= 100mA

V_R= 5V

_R= 250V

_R= 250V, T_J= 150°C

Forward Voltage

μA

150

⎯

Reverse Current (Note 1)

I_R

Total Capacitance

2.0

C_T

t_rr

⎯

V_R= 0, f = 1.0MHz

I_F= I_R= 30mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

Notes:

1. Short duration pulse test used to minimize self-heating effect.

2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. No purposefully added lead. Halogen and Antimony Free.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 4

www.diodes.com

September 2010

BAW101V

Document number: DS32178 Rev. 4 - 2

12 3 4

中文翻译

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