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BAW156_08 PDF预览

BAW156_08

更新时间: 2022-10-15 00:21:39
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
3页 108K
描述
DUAL SURFACE MOUNT LOW LEAKAGE DIODE

BAW156_08 数据手册

 浏览型号BAW156_08的Datasheet PDF文件第2页浏览型号BAW156_08的Datasheet PDF文件第3页 
BAW156  
DUAL SURFACE MOUNT LOW LEAKAGE DIODE  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Surface Mount Package Ideally Suited for Automated Insertion  
Very Low Leakage Current  
Lead Free/RoHS Compliant (Note 3)  
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
Polarity: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
SOT-23  
TOP VIEW  
Internal Schematic  
TOP VIEW  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
VRRM  
VRWM  
VR  
Value  
85  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RMS Reverse Voltage  
60  
V
VR(RMS)  
Forward Continuous Current  
(Note 2)  
Repetitive Peak Forward Current (Note 2)  
Non-Repetitive Peak Forward Surge Current  
Single diode  
Double diode  
160  
140  
500  
4.0  
1.0  
0.5  
mA  
mA  
IFM  
IFRM  
@ t = 1.0μs  
@ t = 1.0ms  
@ t = 1.0s  
A
IFSM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
250  
Unit  
mW  
Power Dissipation (Note 2)  
Thermal Resistance Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
500  
°C/W  
°C  
Rθ  
TJ , TSTG  
JA  
-65 to +150  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 1)  
85  
V
V(BR)R  
IR = 100μA  
IF = 1.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
0.90  
1.0  
1.1  
Forward Voltage  
V
VF  
1.25  
VR = 75V  
5.0  
80  
nA  
nA  
Leakage Current (Note 1)  
Total Capacitance  
IR  
CT  
trr  
3
VR = 75V, TJ = 150°C  
VR = 0, f = 1.0MHz  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100Ω  
pF  
Reverse Recovery Time  
3.0  
μs  
Notes:  
1. Short duration pulse test used to minimize self-heating effect.  
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. No purposefully added lead.  
1 of 3  
www.diodes.com  
March 2008  
© Diodes Incorporated  
BAW156  
Document number: DS30231 Rev. 9 - 2  

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