Datasheet > BAW101S

BAW101S

更新时间： 2024-02-15 07:16:17

品牌	Logo	应用领域
TYSEMI		二极管开关光电二极管
页数	文件大小	规格书
2页	94K
描述
Small plastic SMD package High switching speed: max. 50 ns High continuous reverse voltage: 300 V

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BAW101S 数据手册

Product specification

BAW101S

SOT-363

Unit: mm

+0.1

1.3

-0.1

0.65

Features

Small plastic SMD package

High switching speed: max. 50 ns

High continuous reverse voltage: 300 V

Electrically insulated diodes.

+0.05

0.1

-0.02

+0.1

0.3

-0.1

+0.1

2.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Per diode

Symbol

Conditions

Min

Max

Unit

300

600

300

600

250

140

625

4.5

continuous reverse voltage

repetitive peak forward current

continuous forward current

V^R

V^RRM

I^F

series connection

single diode loaded;

double diode loaded;

repetitive peak forward current

non-repetitive peak forward current

total power dissipation

I^FRM

I^FSM

P^tot

square wave; T^j= 25 prior to surge;t = 1

Ts = 25

350

+150

150

+150

255

357

storage temperature

T^stg

-65

junction temperature

T^j

operating ambient temperature

thermal resistance from junction to soldering point

thermal resistance from junction to ambient

T^amb

Rth j-s

R^{th j-a}

K/W

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4008-318-123

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