Datasheet > BAW101S-Q

BAW101S-Q

更新时间： 2023-09-03 20:29:32

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	209K
描述
High voltage double diodeProduction

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BAW101S-Q 数据手册

BAW101S-Q

High voltage double diode

14 September 2021

Product data sheet

1. General description

The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar

technology and encapsulated in a small SOT363 Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Small plastic SMD package

•

High switching speed: max. 50 ns

High continuous reverse voltage: 300 V

Electrically insulated diodes

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High voltage switching

Automotive

Communication

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

I_F

forward current

reverse voltage

single diode loaded

[1]

250

300

V_R

t_rr

reverse recovery time I_F= 30 mA; I_R= 30 mA; R_L= 100 Ω;

T_j= 25 °C; measured at I_R= 3 mA

[1] Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm².

12 3 4 5 6 7...10

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