Datasheet > RM48N100D3

RM48N100D3

更新时间： 2024-11-18 18:09:35

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	253K
描述
Vdss (V) : 100V;Id @ 25C (A) : 48 A;Rds-on (typ) (mOhms) : 11.3 mOhms;Total Gate Charge (nQ) typ : 27.8 nQ;Maximum Power Dissipation (W) : 61 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 1640 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN3x3

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RM48N100D3 数据手册

RM48N100D3

N-Channel Super Trench Power MOSFET

Description

The RM48N100D3 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

V_DS=100V,I_D=48A

R_DS(ON)<13.6mΩ @ V_GS=10V

R_DS(ON)<22mΩ @ V_GS=4.5V

Excellent gate charge x R_DS(on)product

Very low on-resistance R_DS(on)

Pb-free lead plating

pin assignment

100% UIS tested

Application

DC/DC Converter

Ideal for high-frequency switching and synchronous

Halogen-free

rectification

P/N suffix V means AEC-Q101 qualified, e.g:RM48N100D3V

DFN 3x3 EP top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM48N100D3

DFN 3X3

48N100

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

20/-12

V^GS

Drain Current-Continuous (Silicon Limited)

I_D

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_D(100

)

192

I_DM

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

0.49

E_AS

115

Operating Junction and Storage Temperature Range

-50 To 150

T_J,T_STG

2018-12/57

REV:O

12 3 4 5 6 7

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