Datasheet > BAW100GTRPBFREE

BAW100GTRPBFREE

更新时间： 2024-11-14 04:07:51

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描述
Diode,

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BAW100GTRPBFREE 数据手册

BAW100

BAW100G

www.centralsemi.com

SURFACE MOUNT

DUAL, ISOLATED HIGH SPEED

SILICON SWITCHING DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BAW100 and

BAW100G each consist of two electrically isolated high

speed silicon switching diodes packaged in an epoxy

molded SOT-143 surface mount case. This device is

designed for high speed switching applications.

The BAW100G is Halogen Free by design.

•

MARKING CODES:

BAW100: CJSS

BAW100G: CJSG

SOT-143 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

RRM

250

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0ms

Peak Forward Surge Current, tp=1.0s

Power Dissipation

500

FRM

4.0

FSM

2.0

1.0

350

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

V =25V, T =150°C

V =75V

1.0

V =75V, T =150°C

I =100μA

I =1.0mA

715

855

1.00

1.25

2.0

I =10mA

I =50mA

I =150mA

V =0, f=1.0MHz

I =I =10mA, R =100Ω, Rec. to 1.0mA

6.0

R4 (20-November 2009)

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