Datasheet > BAV23A

BAV23A

更新时间： 2024-05-23 22:22:34

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	86K
描述
SOT-23

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中文翻译

获取价格

技术参数
数据手册

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BAV23A 技术参数

Case Style：	SOT-23	IF（mA）：	400
Maximum recurrent peak reverse voltage：	250	TRR（nS)：	50
Maximum instantaneous forward voltage：	1.0	@IF（uA）：	0.1
Maximum reverse current：	0.1	@VR：	200
class：	Diodes

BAV23A 数据手册

SEMICONDUCTOR

BAV23A

SILICON EPITAXIAL PLANAR DIODE

TECHNICAL DATA

High Voltage Switching.

FEATURES

DIM MILLIMETERS

2.93 0.20

· Low Leakage Current.

1.30+0.20/-0.15

1.30 MAX

0.40+0.15/-0.05

2.40+0.30/-0.20

1.90

· Repetitive Peak Reverse Voltage : V_RRM≦250V.

· Low Capacitance : C_T≦2pF.

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

℃

)

MAXIMUM RATING (Ta=25

CHARACTERISTIC

1. CATHODE 1

2. CATHODE 2

3. ANODE

SYMBOL RATING

UNIT

V_RM

V_R

Maximum (Peak) Reverse Voltage

Reverse Voltage

250

200

SOT-23

I_FM

Maximum (Peak) Forward Current

625

Single diode loaded.

Double diode loaded.

t = 1μs

225

I_F

Forward Current

125

Marking

Lot No.

Surge Current

(Square wave)

I_FSM

t = 100μs

Type Name

t = 10ms

1.7

J D

P_D

T_j

Power Dissipation

250*

150

℃

Junction Temperature

T_stg

Storage Temperature Range

-55∼ 150

Note : * Device mounted on a FR4 Printed-Circuit Board (PCB)

℃

)

ELECTRICAL CHARACTERISTICS (Ta=25

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

1.0

UNIT

I_F=100mA

V_F

Forward Voltage

I_F=200mA

1.25

0.1

V_R=200V

I_R

Reverse Current

μA

V_R=200V, T_j=150℃

V_R=0V, f=1MHz

I_F=10mA, I_R=10mA, I_RM=1mA

100

C_T

t_rr

Total Capacitance

Reverse Recovery Time

2020. 10. 05

Revision No : 1

1/2

中文翻译

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