Datasheet > BAV19

BAV19

更新时间： 2024-11-02 14:48:47

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森美特 - SUNMATE		/
页数	文件大小	规格书
2页	602K
描述
Switching Diodes Switch detector

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中文翻译

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数据手册

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BAV19 数据手册

BAV17 - BAV21

SMALL SIGAL SWITCHING DIODES

DO-35(GLASS)

Features

Silicon epitaxial planar diode

High speed switching diode

500 mW power dissipation

1.0 2(26.0)

MIN.

0.079(2.0)

MAX

Mechanical Data

0.165 (4.2)

MAX

Case: DO-35,glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

1.0 2(26.0)

MIN.

0.020(0.52)

TYP

Dimensions in millimeters

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Symbol

Unit

Characteristic

BAV17

BAV18

BAV19

100

BAV20

150

200

BAV21

200

250

Reverse voltage

Peak reverse voltage

Average forw ard rectified current

Half w ave rectification w ith resist.load

V_R

120

V_RM

I_(AV)

250¹⁾

T =

and f 50Hz

Forw ard surge current @ t<1s and T =

1.0

I_FSM

P_tot

R_θJA

T_J

500¹⁾

Pow er dissipation

Thermal resistance junction to ambient

Junction temperature

@ T_A=25

K/W

350

175

-55 --- +175

Storage temperature range

T_STG

1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

T_A= 25ꢀC unless otherwise specified

Electrical Characteristics

Characteristic

MIN

TYP

MAX

Unit

Symbol

Forw ard voltage @ I_F=100mA

1.0

100

V_F

Leakage current

@T_j=25

I_R

at reverse voltage

@T_j=100

@ V =V =0 f=1MH_Z

F R

1.5

Capacitance

Reverse recovery time

from I_F=30mA to I_R=30mA

C_J

t_rr

from I_RR=3mA, R_L=100Ω.

1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

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