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BAV19_15 PDF预览

BAV19_15

更新时间: 2024-02-22 16:20:15
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3页 150K
描述
Small-Signal Diode Fast Switching Diodes

BAV19_15 数据手册

 浏览型号BAV19_15的Datasheet PDF文件第2页浏览型号BAV19_15的Datasheet PDF文件第3页 
BAV19 thru BAV21  
Small-Signal Diode  
Fast Switching Diodes  
Features  
Silicon Epitaxial Planar Diode  
For general purpose  
This diode is also available in other case styles including: the  
MiniMELF case with the type designation BAV101 to BAV103.  
Mechanical Data  
Case: DO-35 Glass Case  
Weight: approx. 0.13g  
Maximum Ratings and Thermal Characteristics  
(TA=25oC unless otherwise noted.)  
Parameter  
Symbol  
Limit  
Unit  
Continuous reverse voltage  
BAV19  
BAV20  
BAV21  
100  
150  
200  
VR  
Volts  
Repetitive peak reverse voltage  
BAV19  
BAV20  
BAV21  
120  
200  
250  
VRRM  
Volts  
mA  
(1)  
Forward DC current at Tamb=25oC  
Rectified current (Average)  
IF  
250  
half wave rectification with resist. load  
IF(AV)  
200  
mA  
(1)  
at Tamb=25oC  
Repetitive peak forward current  
IFRM  
625  
mA  
(1)  
at f>50Hz, Θ=180O, Tamb=25oC  
Surge forward current at t<1s and T=25oC  
IFSM  
Ptot  
1.0  
500  
Amp  
mW  
oC/W  
oC  
j
(1)  
Power dissipation at Tamb=25oC  
Thermal resistance junction to ambient air (1)  
Junction temperature (1)  
RθJA  
430  
T
175  
j
Storage temperature range (1)  
TS  
-65 to +175  
oC  
Notes:  
1. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case  
632  

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