Datasheet > BAV199

BAV199

更新时间： 2024-09-27 06:41:31

品牌	Logo	应用领域
商升特 - SEMTECH		二极管
页数	文件大小	规格书
2页	176K
描述
LOW LEAKAGE DOUBLE DIODE

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中文翻译

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数据手册

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BAV199 数据手册

BAV199

LOW LEAKAGE DOUBLE DIODE

For low leakage current applications

Feature

• Very low leakage current

• Medium speed switching times

• Series pair configuration

Marking: PX

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RRM

V_R

Value

Unit

Peak Repetitive Reverse Voltage

Continuous Reverse Voltage

Continuous Forward Current

Single Diode

Double Diode

160

140

I_F

Repetitive Peak Forward Current

I_FRM

500

Non-Repetitive Peak Forward Surge Current at t = 1 µs

0.5

at t = 1 ms

at t = 1 s

I_FSM

Power Dissipation

P_D

250

500

Thermal Resistance Junction to Ambient Air

Operating and Storage Temperature Range

R_θJA

C/W

T_j, T_stg

- 65 to + 150

Electrical Characteristics (T_a= 25 C unless otherwise specified)

Parameter

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 1 mA

Symbol

Min.

Typ.

Max.

Unit

V_(BR)R

0.9

1.1

1.25

at I_F= 10 mA

at I_F= 50 mA

at I_F= 150 mA

Reverse Current

at V_R= 75 V

V_F

I_R

at V_R= 75 V, T_j= 150 C

Total Capacitance

at V_R= 0, f = 1 MHz

C_T

t_rr

µs

Reverse Recovery Time

at I_F= I_R= 10 mA, I_rr= 0.1 X I_R, R_L= 100 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 04/07/2006

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