Datasheet > BAV199DW

BAV199DW

更新时间： 2023-12-06 20:09:13

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1457K
描述
SOT-363

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中文翻译

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数据手册

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BAV199DW 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Diodes

SOT-363

BAV199DW Multi-Chip Diode

FEATURES

Surface Mount Package Ideally Suited for

Automatic Insertion

Very Low Leakage Current

MARKING:K52

K52

Soliddot = Pin1 indicate.

Soliddot = Green molding compound device.

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃

Symbol

Parameter

Value

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Reverse Voltage

160

I_O

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current @t=8.3

Power Dissipation

I_FSM

P_D

200

R_ΘJA

T_J,T_stg

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

625

℃/W

℃

-55~+150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test

conditions

Min

Typ

Max

Unit

Reverse breakdown voltage

Reverse voltage leakage current

I_R= 100µA

V_R=75V

I_F=1mA

0.9

1.0

1.1

I_F=10mA

I_F=50mA

I_F=150mA

Forward voltage

V_F

1.25

V_R=0V, f=1MHz

µs

Total capacitance

C_tot

t_rr

I_F=I_R=10mA

Reveres recovery time

I_rr=0.1ХI_R,R_L=100Ω

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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