BAV199DW

更新时间： 2024-11-24 08:48:55

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	537K
描述
200mW 85Volt Plastic-Encapsulate Diode

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中文翻译

获取价格

数据手册

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BAV199DW 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

BAV199DW

Features

Low Leakage Leakage Current

200mW 85Volt

Plastic-Encapsulate

Diode

Surface Mount Package ideally Suited for

Automatic Insertion

Lead Free Finish/Rohs Compliant ("P"Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

MAKING:K52

SOT-363

Maximum Ratings

Operating Temperature: -65°C to +150°C

Storage Temperature: -65°C to +150°C

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Voltage

V_R

I_FM

85V

Forward continuous

Current

160mA

Power Dissipation

P_D

V_F

200mW

DIMENSIONS

INCHES

MIN

0.9V

1.0V

1.1V

1.25V

I_FM= 1mA;

I_FM= 10mA;

I_FM= 50mA;

I_FM= 150mA;

Maximum

Instantaneous

Forward Voltage

DIM

MAX

.014

.053

.096

MIN

0.15

1.15

2.15

MAX

0.35

1.35

2.45

NOTE

.006

.045

.085

.026

0.65Nominal

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

.047

.071

---

.055

.087

.004

.043

.018

.006

1.20

1.80

1.40

2.20

0.10

1.10

0.46

0.15

I_R

5nA

VR=75V

---

.035

.010

.003

0.90

0.26

0.08

Typical Junction

Capacitance

Reverse Recovery

Time

C_J

T_rr

2.0pF

Measured at

1.0MHz, V_R=0V

I_F=IR=10mA

Irr = 0.1*IR

3uS

R_c=100W

www.mccsemi.com

Revision: A

2011/01/01

1 of 3

12 3

中文翻译

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