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BAV199 PDF预览

BAV199

更新时间: 2023-09-03 20:37:22
品牌 Logo 应用领域
安世 - NEXPERIA 二极管
页数 文件大小 规格书
9页 653K
描述
Low-leakage double diodeProduction

BAV199 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3湿度敏感等级:1
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.16 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
最大重复峰值反向电压:85 V最大反向恢复时间:3 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAV199 数据手册

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BAV199  
Low-leakage double diode  
1 April 2023  
Product data sheet  
1. General description  
Epitaxial, medium-speed switching, double diode in a small SOT23 Surface-Mounted Device  
(SMD) plastic package. The diodes are connected in series.  
2. Features and benefits  
Plastic SMD package  
Low leakage current: typ. 3 pA  
Switching time: typ. 0.8 us  
Continuous reverse voltage: max. 75 V  
Repetitive peak reverse voltage: max. 85 V  
Repetitive peak forward current: max. 500 mA.  
3. Applications  
Low-leakage current applications in surface mounted circuits.  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Per diode  
VR  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
reverse voltage  
reverse current  
-
-
-
75  
80  
V
IR  
VR = 75 V; Tj = 150 °C  
3
nA  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
A1  
Description  
Simplified outline  
Graphic symbol  
3
anode (diode 1)  
cathode (diode 2)  
K1, A2  
2
K2  
3
K1, A2  
cathode (diode 1) and  
anode (diode 2)  
1
2
A1  
K2  
006aaa763  
SOT23  
 
 
 
 
 

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