Datasheet > BAV19_14

BAV19_14

更新时间： 2024-11-02 01:11:35

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描述
High Voltage Switching Diode

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中文翻译

获取价格

数据手册

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BAV19_14 数据手册

BAV19 / BAV20 / BAV21

Taiwan Semiconductor

Small Signal Product

High Voltage Switching Diode

FEATURES

- Fast switching device (trr<4.0ns)

- Through-hole device type mounting

- Hermetically sealed glasss

- Solder hot dip tin (Sn) lead finish

- All external surfaces are corrosion resistant and

leads are readily solderable

- Packing code with suffix "G" means

Halogen free

DO-35

Hermetically Sealed Glass

MECHANICAL DATA

- Case: DO-35 package

- High temperature soldering guaranteed: 260^oC/10s

- Polarity: Indicated by black cathode band

- Weight: 109 ± 4 mg

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25^oC unless otherwise noted)

PARAMETER

VALUE

SYMBOL

UNIT

Power Dissipation

P_D

500

Pulse Width = 1 s , Square Wave

Peak Forward Surge

Current

I_FSM

Pulse Width = 1 μs , Square Wave

200

I_O

Average Forward Current

^oC/W

^oC

Thermal Resistance (Junction to Ambient)

Junction and Storage Temperature Range

R_θJA

300

T_J, T_STG

-65 to +200

PARAMETER

MIN

120

200

250

MAX

SYMBOL

UNIT

BAV19

I_R= 100 μA

V_(BR)

Reverse Breakdown Voltage

Forward Voltage

BAV20

BAV21

I_F= 100 mA

I_F= 200 mA

V_R= 100 V

V_R= 150 V

V_R= 200 V

1.00

1.25

V_F

BAV19

BAV20

BAV21

I_R

Reverse Leakage Current

100

V_R= 0 , f = 1.0 MHz

(Note 1)

Junction Capacitance

C_J

trr

Reverse Recovery Time

Note 1: Test condition : I_F= I_R= 30mA , R_L=100Ω , I_RR=3mA

Document Number: DS_S1412015

Version: D14

12 3 4

中文翻译

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