Datasheet > BAV19

BAV19

更新时间： 2024-11-01 12:23:55

品牌	Logo	应用领域
鲁光 - LGE		小信号开关二极管
页数	文件大小	规格书
2页	170K
描述
Small Signal Switching Diodes

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中文翻译

获取价格

技术参数
数据手册

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BAV19 技术参数

Case Style：	DO-35	IF（mA）：	250
Maximum recurrent peak reverse voltage：	120	TRR（nS)：	50
Maximum instantaneous forward voltage：	1	@IF（uA）：	0.1
Maximum reverse current：	0.1	@VR：
class：	Diodes

BAV19 数据手册

BAV17-BAV21

Small Signal Switching Diodes

VOLTAGE RANGE: 20-200 V

CURRENT: 250 mA

DO - 35(GLASS)

Features

Silicon epitaxial planar diode

High speed switching diode

500 mW power dissipation

Mechanical Data

Case: DO-35,glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified.

MAXIMUM RATINGS

UNITS

BAV17

BAV18

BAV19

100

BAV20

150

200

BAV21

200

250

Reverse voltage

Peak reverse voltage

Average forw ard rectified current

Half w ave rectification w ith resist.load

V_R

120

V_RM

I_(AV)

250¹⁾

T =

and f 50Hz

Forw ard surge current @ t<1s and T =

1.0

I_FSM

P_tot

R_θJA

T_J

500¹⁾

Pow er dissipation

Thermal resistance junction to ambient

Junction temperature

@ T_A=25

K/W

350

175

-55 --- +175

Storage temperature range

T_STG

1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

ELECTRICAL CHARACTERISTICS

MIN

TYP

MAX

UNITS

Forw ard voltage @ I_F=100mA

1.0

100

V_F

I_R

Leakage current

@T_j=25

at reverse voltage

@T_j=100

@ V =V =0 f=1MH_Z

F R

1.5

Capacitance

Reverse recovery time

C_J

t_rr

from I_F=30mA to I_R=30mA

from I_RR=3mA, R_L=100Ω.

1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

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mail:lge@luguang.cn

中文翻译

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