BAV19

更新时间： 2024-11-01 08:48:55

品牌	Logo	应用领域
EIC		整流二极管开关
页数	文件大小	规格书
2页	33K
描述
SWITCHING DIODES

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中文翻译

获取价格

技术参数
数据手册

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BAV19 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.59	Is Samacsys：	N
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1 V	元件数量：	1
最高工作温度：	175 °C	最大输出电流：	0.25 A
最大重复峰值反向电压：	120 V	最大反向恢复时间：	0.05 µs
子类别：	Rectifier Diodes	表面贴装：	NO
Base Number Matches：	1

BAV19 数据手册

SWITCHING DIODES

BAV19 ~ BAV21

DO - 35 Glass

(DO-204AH)

FEATURES :

• switching speed: max. 50 ns

• For general purpose

1.00 (25.4)

0.079(2.0 )max.

min.

• This diode is also available in other case styles

including: the the MiniMELF case with the type

designation BAV101 to BAV103, the SOT-23 case

with the type designation BAS19 to BAS21

* Pb / RoHS Free

0.150 (3.8)

Cathode

max.

Mark

1.00 (25.4)

0.020 (0.52)max.

min.

MECHANICAL DATA :

Case: DO-35 Glass Case

Weight: approx. 0.13g

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

Value

Unit

BAV19

BAV20

BAV21

BAV19

BAV20

BAV21

120

200

250

100

150

200

V_RRM

Maximum Repetitive Peak Reverse Voltage

V_RM

Maximum Continuous Reverse Voltage

Maximum Rectified Current (Average)

Half Wave Rectification with Resist. Load

Maximum Continuous Current ⁽¹⁾

Maximum Power Dissipation ⁽¹⁾

I_F(AV)

200

I_F

250

500

P_D

(1)

I_FRM

I_FSM

T_J

625

Maximum Repetitive Peak Forward Current

Maximum Non-repetitive Peak Forward Current at t = 1s

1.0

(1)

175

°C

Maximum Junction Temperature

Storage Temperature Range ⁽¹⁾

T_S

-65 to + 175

Note : (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

Min.

Typ.

Max.

Unit

Parameter

Symbol

V_R= 100 V

BAV19

BAV20

BAV21

100

1.0

I_R

V_R= 150 V

Reverse Current

V_R= 200 V

V_F

I_F= 100 mA

Forward Voltage

f = 1MHz ; V_R= 0

I_F= 30mA , I_R= 30mA

I_RR= 3mA , R_L= 100 W

Diode Capacitance

1.5

Reverse Recovery Time

Trr

Page 1 of 2

Rev. 02 : March 25, 2005

中文翻译

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